US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Conductive structures with barriers and liners of varying thicknesses" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,764, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Conductive structures with barriers and liners of varying thicknesses" was invented by Shu-Cheng Chin (Hsinchu, Taiwan), Chih-Chien Chi (Hsinchu, Taiwan) and Chi-Feng Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A barrier layer is selectively formed on a bottom surface of a recess (e.g., in which a back end of line (BEOL) conductive structure will be formed) using a combination of flash physical vapor deposition with atomic layer deposition. Additionally, a ruthenium liner is selectively deposited on sidewalls of the BEOL con...