US Patent Issued to Taiwan Semiconductor Manufacturing on May 20 for "Variable width nano-sheet field-effect transistor cell structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,307,183, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Variable width nano-sheet field-effect transistor cell structure" was invented by Wei-An Lai (Taichung, Taiwan), Wei-Cheng Lin (Taichung, Taiwan), Yan-Hao Chen (Hsinchu, Taiwan), Jiann-Tyng Tzeng (Hsinchu, Taiwan), Lipen Yuan (Zhubei, Taiwan), Hui-Zhong Zhuang (Kaohsiung, Taiwan) and Yu-Xuan Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "One aspect of this description relates to a method for operating an integrated circuit (IC) manufacturing system. The method includes placing a first nano-sheet structure within a IC layout d...