US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 20 for "Structure and method for an MRAM device with a multi-layer top electrode" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,255, issued on May 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Structure and method for an MRAM device with a multi-layer top electrode" was invented by Wei-Hao Liao (Taichung, Taiwan), Hsi-Wen Tien (Hsinchu County, Taiwan), Chih Wei Lu (Hsinchu, Taiwan), Pin-Ren Dai (New Taipei, Taiwan) and Chung-Ju Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a bottom electrode, a tunneling junction disposed over the bottom electrode, and a top electrode disposed over the tunneling junction. The top electrode includes a first top electrode layer and a second top electrode layer...