ALEXANDRIA, Va., June 16 -- United States Patent no. 12,309,989, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Stacked SRAM device" was invented by Huai-Ying Huang (New Taipei, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor structure, a logic circuit, a plurality of first memory cells and through vias. The logic circuit is disposed at a first level over the semiconductor substrate. The first memory cells are disposed at a second level over the semiconductor substrate, wherein the second level is stacked on top and overlapped with the first level. Each of the first memor...