US Patent Issued to Taiwan Semiconductor Manufacturing on May 20 for "Semiconductor structure and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,050, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure and method of forming the same" was invented by Kan-Ju Lin (Kaohsiung, Taiwan), Chien Chang (Hsinchu, Taiwan), Chih-Shiun Chou (Hsinchu, Taiwan), TaiMin Chang (Taipei, Taiwan), Hung-Yi Huang (Hsinchu, Taiwan), Chih-Wei Chang (Hsinchu, Taiwan), Ming-Hsing Tsai (Chu-Pei, Taiwan) and Lin-Yu Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate structure on a semiconductor fin, a dielectric layer on the gate structure, and a gate contact extending through the dielectric laye...