US Patent Issued to Taiwan Semiconductor Manufacturing on May 20 for "Semiconductor device with integrated metal-insulator-metal capacitors" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,309, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device with integrated metal-insulator-metal capacitors" was invented by Wei-Zhong Chen (Taipei, Taiwan), JeiMing Chen (Tainan, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate; an interconnect structure over the substrate; an etch stop layer over the interconnect structure; and metal-insulator-metal (MIM) capacitors over the etch stop layer. The MIM capacitors includes: a bottom electrode extending along the etch stop layer, where the bottom electro...