US Patent Issued to Taiwan Semiconductor Manufacturing on May 20 for "NanoStructure field-effect transistor device and methods of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,074, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"NanoStructure field-effect transistor device and methods of forming" was invented by Yi-Shao Li (Hsinchu, Taiwan), Shu-Han Chen (Hsinchu, Taiwan), Chun-Heng Chen (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a nanostructure field-effect transistor (nano-FET) device includes: forming a fin structure that includes a fin and alternating layers of a first semiconductor material and a second semiconductor material overlying the fin; forming a dummy gate structure over the fin struct...