US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 20 for "Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,094, issued on May 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers" was invented by Bo-Feng Young (Taipei, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The device includes a first pair and a second pair of source/drain features over a semiconductor substrate. The first pair of source/drain features are p-type doped. The second pair of source/drain features are...