US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 20 for "Multigate device with stressor layers and method of fabricating thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,067, issued on May 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multigate device with stressor layers and method of fabricating thereof" was invented by Ka-Hing Fung (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and devices of providing tensile/compressive stressor layers for gate-all-around devices. A first GAA device and a second GAA are disposed having a shallow trench isolation feature and one of more stressor layers between gate structures of the first GAA device and the second GAA. The stressor layers can provide tensile stress to a channel layer of the first GAA devic...