ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,292, issued on May 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Methods of forming semiconductor device structures" was invented by Yu-Chen Ko (Chiayi, Taiwan), Kai-Chieh Yang (New Taipei, Taiwan), Yu-Ting Wen (Taichung, Taiwan), Ya-Yi Cheng (Taichung, Taiwan), Min-Hsiu Hung (Tainan, Taiwan), Wei-Jung Lin (Hsinchu, Taiwan), Chih-Wei Chang (Hsinchu, Taiwan) and Ming-Hsing Tsai (Chupei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a semiconductor device structure are described. In some embodiments, the method includes forming a contact opening in an interlayer dielectric (ILD) laye...