ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,366, issued on May 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Method of manufacturing semiconductor devices and semiconductor devices" was invented by Shahaji B. More (Hsinchu, Taiwan) and Chandrashekhar Prakash Savant (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A gate structure of a field effect transistor includes a first gate dielectric layer, a second gate dielectric layer, and one or more conductive layers disposed over the first gate dielectric layer and the second gate dielectric layer. The first gate dielectric layer is separated from the second gate dielectric layer by a gap f...