US Patent Issued to Taiwan Semiconductor Manufacturing on May 20 for "Method of forming metal gate fin electrode structure by etching back metal fill" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,078, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming metal gate fin electrode structure by etching back metal fill" was invented by Shih-Hang Chiu (Taichung, Taiwan), Wei-Cheng Wang (Hsinchu, Taiwan), Chung-Chiang Wu (Taichung, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a replacement metal gate in a FinFET or nanoFET which utilizes a conductive metal fill. The conductive metal fill has an upper surface which has a fin shape which may be used for a self-aligned contact."

The patent was filed on March 22, 2022, under Ap...