US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 20 for "Method of fabricating a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,043, issued on May 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of fabricating a semiconductor device" was invented by Yi-Chen Lo (Zhubei, Taiwan), Li-Te Lin (Hsinchu, Taiwan) and Yu-Lien Huang (Jhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device comprises forming a gate electrode structure over a first region of a semiconductor substrate, and forming a source/drain region on a second region of the semiconductor substrate. The gate electrode structure comprises a metal gate electrode layer, a gate dielectric layer, and gate sidewalls. The seco...