US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 20 for "Method for forming semiconductor device with transistors on opposite sides of a dielectric layer" (Belgian Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,063, issued on May 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor device with transistors on opposite sides of a dielectric layer" was invented by Oreste Madia (Brussels), Georgios Vellianitis (Heverlee, Belgium), Gerben Doornbos (Kessel-Lo, Belgium) and Marcus Johannes Henricus Van Dal (Linden, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first dielectric layer over a substrate; forming a first transistor over a first side of the first dielectric layer; removing the substrate to expose a second side of the first dielectric layer opposite ...