ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,283, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Method for forming interconnect structure" was invented by Chun-Kai Chen (Kaohsiung, Taiwan), Jei Ming Chen (Tainan, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a first dielectric layer over a first conductive feature, depositing a first mask layer over the first dielectric layer, and depositing a second mask layer over the first mask layer. A first opening is patterned in the first mask layer and the second mask layer, the first opening having a first width. A second openin...