US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 20 for "Method for fabricating semiconductor structure with cutting depth control" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,096, issued on May 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method for fabricating semiconductor structure with cutting depth control" was invented by Chih-Chang Hung (Hsinchu, Taiwan), Shu-Yuan Ku (Hsinchu County, Taiwan), I-Wei Yang (Yilan County, Taiwan), Yi-Hsuan Hsiao (Taipei, Taiwan), Ming-Ching Chang (Hsinchu, Taiwan) and Ryan Chia-Jen Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method incudes forming first and second semiconductor fins upwardly extending from a substrate; forming a gate strip extending across the first and second semiconductor fins; growing first source/dr...