US Patent Issued to Taiwan Semiconductor Manufacturing on May 20 for "Integrated circuit structure with backside dielectric layer having air gap" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,287, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit structure with backside dielectric layer having air gap" was invented by Che-Lun Chang (Hsinchu, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Chia-Pin Lin (Xinpu Township, Taiwan) and Yuan-Ching Peng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) structure includes a gate structure, a source epitaxial structure, a drain epitaxial structure, a front-side interconnection structure, a backside dielectric layer, and a backside via. The source epitaxial structure and the drain epitaxial structure...