US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 20 for "High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,230, issued on May 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same" was invented by Po-Chun Liu (Hsinchu, Taiwan), Chung-Chieh Hsu (Hsinchu, Taiwan), Chi-Ming Chen (Hsinchu, Taiwan), Chung-Yi Yu (Hsinchu, Taiwan), Chen-Hao Chiang (Hsinchu, Taiwan) and Min-Chang Ching (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) includes a substrate; and a first semiconductor layer over the substrate. The HEMT further includes a second semiconductor layer o...