ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,077, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Dual damascene structure in forming source/drain contacts" was invented by Chien-Han Chen (Nantou County, Taiwan), Shih-Yu Chang (Yunlin County, Taiwan), Chien-Chih Chiu (Xinying, Taiwan), Huang-Ming Chen (Hsinchu, Taiwan) and Jyu-Horng Shieh (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a transistor comprising a source/drain region and a gate electrode, forming a source/drain contact plug over and electrically connecting to the source/drain region, forming a first inter-layer dielectric over the source/d...