US Patent Issued to Taiwan Semiconductor Manufacturing on May 20 for "Dielectric protection layer in middle-of-line interconnect structure manufacturing method" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,097, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dielectric protection layer in middle-of-line interconnect structure manufacturing method" was invented by Kuan-Da Huang (Hsinchu County, Taiwan), Hao-Heng Liu (Hsinchu, Taiwan) and Li-Te Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to an integrated chip including a gate electrode over a substrate. A pair of source/drain regions are disposed in the substrate on opposing sides of the gate electrode. A dielectric layer is over the substrate. An etch stop layer is between the g...