ALEXANDRIA, Va., June 16 -- United States Patent no. 12,309,990, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Data backup unit for static random-access memory device" was invented by Yun-Feng Kao (New Taipei, Taiwan) and Katherine H. Chiang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present application are directed towards a memory device including a memory cell. The memory cell includes a plurality of semiconductor devices disposed on a substrate. A lower inter-metal dielectric (IMD) structure overlies the semiconductor devices. A plurality of conductive vias and a plurality of conductive wires are dispos...