ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,553, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Vertical DRAM structure and method" was invented by Chia-Ta Yu (New Taipei, Taiwan), Bo-Feng Young (Taipei, Taiwan), Hung Wei Li (Hsinchu, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan) and Chi On Chui (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a side-channel dynamic random access memory (DRAM) cell and cell array that utilizes a vertical design with side channel transistors. A dielectric layer disposed over a substrate. A gate electrode is embedded in the dielectric layer. A channel laye...