ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,723, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Transistor including downward extending silicide" was invented by Jung-Chien Cheng (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Guan-Lin Chen (Hsinchu, Taiwan), Bo-Rong Lin (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a transistor having a plurality of semiconductor nanostructures arranged in a stack and corresponding to channel regions of the transistor. The transistor includes a source/drain region in contact with the cha...