ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,557, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Three-dimensional memory device and method of manufacture" was invented by Bo-Feng Young (Taipei, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan), Chi On Chui (Hsinchu, Taiwan), Chun-Chieh Lu (Taipei, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a method includes forming a multi-layer stack including alternating layers of an isolation material and a semiconductor material, patterning the multi-layer stack to form a first channel structure in a first region of the multi-layer stack, where the fir...