ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,636, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Three-dimensional memory device" was invented by Chun-Chieh Lu (Taipei, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan), Bo-Feng Young (Taipei, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Han-Jong Chia (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a memory device includes: forming a first layer stack and a second layer stack successively over a substrate, wherein each of the first and the second layer stacks comprises a dielectric layer, a channel layer, and a source/drain layer formed successively over the substrate;...