US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "System and method of forming a porous low-k structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,486, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"System and method of forming a porous low-k structure" was invented by Bo-Jiun Lin (Jhubei, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan) and Tien-I Bao (Dayuan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls o...