US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Structure and formation method of semiconductor device with isolation structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,719, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Structure and formation method of semiconductor device with isolation structure" was invented by Jung-Chien Cheng (Tainan, Taiwan), Kuo-Cheng Chiang (Zhubei, Taiwan), Shi-Ning Ju (Hsinchu, Taiwan), Guan-Lin Chen (Baoshan Township, Hsinchu County, Taiwan) and Chih-Hao Wang (Baoshan Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and a formation method are provided. The method includes forming a first fin structure and a second fin structure over a substrate. The method also includes fo...