US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Static random access memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,690, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Static random access memory device" was invented by Jhon Jhy Liaw (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a static random access memory (SRAM) device includes a first SRAM array including a first plurality of bit cells arranged in a matrix; a second SRAM array including a second plurality of bit cells arranged in a matrix; and a plurality of abutting dummy cells disposed between the first SRAM array and the second SRAM array. Each of the plurality of abutting dummy cells includes a p...