US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Source/drain features with improved strain properties" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,749, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan).

"Source/drain features with improved strain properties" was invented by Chih-Ching Wang (Kinmen County, Taiwan), Wen-Yuan Chen (Taoyuan County, Taiwan), Wen-Hsing Hsieh (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan), Chung-Wei Wu (Hsin-Chu County, Taiwan) and Zhiqiang Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes receiving a semiconductor substrate. The semiconductor substrate has a top surface and includes a semiconductor element. Moreover, the semiconductor substrate has a fin structure formed the...