US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Source/drain contact formation methods and devices" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,539, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Source/drain contact formation methods and devices" was invented by Cheng-Wei Chang (Hsinchu, Taiwan), Yu-Ming Huang (Tainan, Taiwan), Ethan Tseng (Hsinchu, Taiwan), Ken-Yu Chang (Hsinchu, Taiwan) and Yi-Ying Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide l...