US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Semiconductor wafer with devices having different top layer thicknesses" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,637, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor wafer with devices having different top layer thicknesses" was invented by Gulbagh Singh (Hisnchu, Taiwan), Kuan-Liang Liu (Hsinchu, Taiwan), Wang Po-Jen (Hsinchu, Taiwan), Kun-Tsang Chuang (Hsinchu, Taiwan) and Hsin-Chi Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit includes a base silicon layer, a base oxide layer, a first top silicon layer, a second top silicon layer, a first semiconductor device, and a second semiconductor device. The base oxide layer is formed over the base silicon layer. The first...