US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Semiconductor structure and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,562, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and method of forming the same" was invented by Yu-Wei Jiang (Hsinchu, Taiwan), Sheng-Chih Lai (Hsinchu County, Taiwan), Kuo-Chang Chiang (Hsinchu, Taiwan), Hung-Chang Sun (Kaohsiung, Taiwan), Tsuching Yang (Taipei, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a plurality of memory cells, which includes a plurality of first conductive lines over a substrate, charge-trapping layers coupled to the conductive lines...