ALEXANDRIA, Va., June 12 -- United States Patent no. 12,297,104, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd. (Hsin-Chu, Taiwan).

"Semiconductor structure and formation thereof" was invented by Kai-Lan Chang (Tainan, Taiwan), Yu-Lung Yeh (Kaohsiung, Taiwan), Yen-Hsiu Chen (Tainan, Taiwan), Shuo Yen Tai (Yongkang, Taiwan) and Yung-Hsiang Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided that includes forming a first metal layer of a seal structure over a micro-electromechanical system (MEMS) structure and over a channel formed through the MEMS structure to an integrated circuit of a semiconductor structure. The first metal layer is fo...