US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Semiconductor devices having fins and multiple isolation regions" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,696, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices having fins and multiple isolation regions" was invented by Chia-Sheng Fan (Zhubei, Taiwan), Bao-Ru Young (Zhubei, Taiwan) and Tung-Heng Hsieh (Zhudong Town, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method includes: forming a first fin and a second fin on a substrate; forming a dummy gate material over the first fin and the second fin; forming a recess in the dummy gate material between the first fin and the second fin; forming a sacrificial oxide on sidewalls of the dummy gate material ...