US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Semiconductor device with non-conformal gate dielectric layers" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,627, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with non-conformal gate dielectric layers" was invented by Yung-Hsiang Chan (Taichung, Taiwan), Wen-Hung Huang (Hsin-Chu, Taiwan), Shan-Mei Liao (Hsinchu, Taiwan), Jian-Hao Chen (Hsinchu, Taiwan), Kuo-Feng Yu (Hsinchu County, Taiwan) and Kuei-Lun Lin (Keelung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first semiconductor layer below a second semiconductor layer; first and second gate dielectric layers surrounding the first and the second semiconductor layers, respectively; and a...