US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Semiconductor device having air gap and method of fabricating thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,734, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having air gap and method of fabricating thereof" was invented by Chia-Hao Chang (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Sheng-Tsung Wang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and devices that provide for a fin structure and a dielectric fin structure. A gate structure is formed over the fin structure and the hybrid fin structure. A plurality of dielectric layers i...