US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Semiconductor device and method of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,640, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacturing thereof" was invented by Tsung-Chieh Hsiao (Shetou Township, Taiwan), Hsiang-Ku Shen (Hsinchu, Taiwan), Yuan-Yang Hsiao (Taipei, Taiwan), Ying-Yao Lai (Hsinchu, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, an opening is formed in a first dielectric layer so that a part of a lower conductive layer is exposed at a bottom of the opening, one or more liner conductive layers are formed over the part of th...