US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Semiconductor device and method of manufacture" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,593, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacture" was invented by Chia-Ching Tsai (Tainan, Taiwan), Yi-Wei Chiu (Kaohsiung, Taiwan), Hung Jui Chang (Shetou Shiang, Taiwan) and Li-Te Hsu (Shanhua Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dielectric layer is formed over a substrate, an anti-reflective layer is formed over the dielectric layer, and a first hardmask is formed over the anti-reflective layer. A via opening and a trench opening are formed within the dielectric layer using the anti-reflective layer and the first hardm...