ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,717, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacture" was invented by Yu-Chang Lin (Hsinchu, Taiwan), Chun-Hung Wu (New Taipei, Taiwan), Liang-Yin Chen (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a multi-layer stack over a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a first recess in the multi-layer stack; forming first spacers on side...