ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,741, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method" was invented by Chih-Teng Liao (Hsinchu, Taiwan), Chia-Cheng Tai (Tainan, Taiwan), Tzu-Chan Weng (Kaohsiung, Taiwan), Yi-Wei Chiu (Kaohsiung, Taiwan) and Chih Hsuan Cheng (Houlong Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a semiconductor fin extending a first height above a substrate, forming a dummy dielectric material over the semiconductor fin and over the substrate, forming a dummy gate material over the dummy dielectric material, the dummy gate material extending ...