US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Semiconductor device and formation method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,599, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device and formation method thereof" was invented by Wei-Chiang Hung (Changhua, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a fin structure, a source/drain region, a first inter-layer dielectric (ILD) layer, a first contact plug, and a second contact plug. The fin structure extends above a substrate. The source/drain region is in the fin structure. The first ILD layer is over the source/drain region. The first contact plug extends through the first ILD layer to a silicide region of the source/...