US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Process and structure for source/drain contacts" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,727, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Process and structure for source/drain contacts" was invented by Meng-Huan Jao (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Sheng-Tsung Wang (Hsinchu, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a structure having source/drain electrodes and a first dielectric layer over the source/drain electrodes; forming a first etch mask covering a first area of the first dielectric layer; per...