US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Pre-charging bit lines through charge-sharing" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,312, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Pre-charging bit lines through charge-sharing" was invented by Mahmut Sinangil (Campbell, Calif.), Chiting Cheng (Taichung, Taiwan), Hung-Jen Liao (Hsinchu, Taiwan) and Tsung-Yung Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, a static random access memory (SRAM) device is provided. The SRAM device includes a memory cell, a bit line couple to the memory cell, a voltage supply line coupled to the memory cell, a control circuitry. The control circuitry is configured to charge a voltage supply line while the v...