ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,487, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Photoresist composition and method of forming photoresist pattern" was invented by Chen-Yu Liu (Kaohsiung, Taiwan), Ching-Yu Chang (Yilang County, Taiwan) and Chin-Hsiang Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a photoresist pattern includes forming an upper layer including a floating additive polymer over a photoresist layer formed on a substrate. The photoresist layer is selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and t...