ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,731, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Multigate device with air gap spacer and backside rail contact and method of fabricating thereof" was invented by Guan-Lin Chen (Hsinchu County, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and devices that include a multigate device having a channel layer disposed between a source feature and a drain feature, a metal gate that surrounds the channel layer, and a first air gap spacer...