US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Multi-gate device with air gap spacer and fabrication methods thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,720, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Multi-gate device with air gap spacer and fabrication methods thereof" was invented by Pei-Yu Wang (Hsinchu, Taiwan) and Wei Ju Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, nanostructures vertically suspended above the substrate, a metal gate structure wrapping each of the nanostructures, an epitaxial feature having a first sidewall in physical contact with end portions of the nanostructures, and an air gap disposed between the epitaxial feature and the metal gate structure. The ai...