US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Modified fuse structure and method of use" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,603, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Modified fuse structure and method of use" was invented by Meng-Sheng Chang (Hsinchu, Taiwan), Chien-Ying Chen (Hsinchu, Taiwan) and Yao-Jen Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An antifuse structure and IC devices incorporating such antifuse structures in which the antifuse structure includes an dielectric antifuse structure formed on an active area having a first dielectric antifuse electrode, a second dielectric antifuse electrode extending parallel to the first dielectric antifuse electrode, a first dielectri...