ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,608, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor device" was invented by Shih-Wei Peng (Hsinchu, Taiwan), Hui-Ting Yang (Hsinchu County, Taiwan), Wei-Cheng Lin (Taichung, Taiwan) and Jiann-Tyng Tzeng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device, including: forming a plurality of gate strips, wherein each gate strip is arranged to be a gate terminal of a transistor; forming a plurality of first metal strips above the plurality of gate strips; and forming a plurality of second metal strips ...