ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,750, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Method of manufacturing a semiconductor device and a semiconductor device" was invented by Shahaji B. More (Hsinchu, Taiwan) and Chun Hsiung Tsai (Xinpu Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, an upper fin structure in which first semiconductor layers and second semiconductor layers are alternately stacked is formed over a lower fin structure, a sacrificial gate structure is formed over the upper fin structure, a source/drain region of the upper fin structure, which is...