ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,507, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device" was invented by Yen-Hao Chen (New Taipei, Taiwan), Wei-Han Lai (New Taipei, Taiwan), Ching-Yu Chang (Yuansun Village, Taiwan) and Chin-Hsiang Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing m...